Limiter-diode LNA
CL3102D-L
orean Facilities : 82-31-250-5 078 / rfsales@rfhic .com All specifications may c hange without notice
S Facility : 919-677-8780 / sa les@rfhicusa.com 1 / 5 Version 1.1
Product Features Applications
• GaAs p-HEMT chip on board
• Limiter–diode insertion
• High Maximum Input Power(+30dB m)
• No matching circuit needed
• Single Su pply Voltage (+5V)
• Surface M ount Hybrid Type
• Tape & Reel Packaging
• Small Size, Hig h Heatsink
• Alumina Substrate
• Pb Free / RoHS Standard
• W iMAX, LTE
• Radar
• Repeater
• Base Station
• RF Sub-Systems
Description
This LNA family is a high gain, ultra low noise amplifier
Electrical Specifications
PARAMETER UNIT MIN TYP MAX
Frequency Range MHz
2700 - 3500
Small Signal Gain (S
21
) dB
- 11.5 -
Gain Flatness dB
-
±1.5
-
Input Return Loss (S
11
) dB
- -14 -
Output Return Loss (S
22
) dB
- -10 -
1dB Compression Point (P
1
dB) dBm
18 20 -
Output 3
rd
Order Intercept Point
(OIP3) (TYP.)
dBm
30 33 -
Noise Figure (TYP.) dB
- 1.1 1.5
RF Input Power (for 12 hours)
dBm - - 30
DC Supply
Current (Vdc=+5V)
mA
- 100 120
Test Condition
Fc=① 3100MHz, Supply Voltage = +5V, 50ohm syst em, Ta = 25℃
② OIP3 is measured with two tones, at an output power of + 0dBm/tone separated by 1MHz.
Absolute Maximum Ratings
PARAMETER UNIT RATING REMARK
Device Voltage V 8 -
RF Input Power dBm 30 -
Operatin g Temperatur e ℃ -40 ~ 85 -
Storage Temperatur e ℃ -50 ~ 125 -
Note
Operation of this device in excess of a ny one of these paramete rs may cause permanent damage.
Package Type : CP-16A
