20.June.2014 Rev.2.2
COBP High Speed Photo Diode
GENERAL DESCRIPTION
The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to
infrared light from the blue-violet light.
The features are low wavelength dependence and fast fall-time.
An ultra-small and thin package of COBP is adopted, and providing high efficient space-saving.
.
FEATURES
• Corresponding to three wavelength (=405nm/650nm/780nm)
• Short rise-time, fall-time
2ns typ. (=405nm/650nm/780nm, VR=2.5V, 10-90%)
• High speed
250MHz ( =780nm)
300MHz ( =650nm)
350MHz ( =405nm)
• Miniature, thin package 1.2mmX1.7mmX0.8mm
• Active area 0.7mmX0.7mm
APPLICATIONS
• Laser monitor for Blu-ray, etc.
• Monitor for RGB wavelength
• Photoelectric switch, Space light transmitting, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER SYMBOL
RATINGS UNIT
Reverse Voltage
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
VR
Topr
Tstg
Tsol
35
-30 to +85
-40 to +100
255
V
C
C
C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C)
PARAMETER SYMBOL
TEST CONDITION MIN TYP MAX UNIT
Dark Current
Forward Voltage
Capacitance
Peak Wavelength
Sensitivity
Rise time, Fall time
Cut off Frequency
ID
VF
Ct
P
S
tr/tf
fc
VR=10V
IF=1mA
VR=2.5V, f=1MHz
—
VR=2.5V, =780nm
VR=2.5V, =650nm
VR=2.5V, =405nm
VR=2.5V, =780nm, 10-90%, 1mW
VR=2.5V, =650nm, 10-90%, 1mW
VR=2.5V, =405nm, 10-90%, 1mW
VR=2.5V, =780nm, RL=50-3dB
VR=2.5V, =650nm, RL=50-3dB
VR=2.5V, =405nm, RL=50-3dB
—
—
—
—
0.37
0.34
0.22
—
—
—
—
—
—
0.1
—
4
800
0.47
0.42
0.28
2
2
2
250
300
350
2.0
1.0
—
—
—
—
—
—
—
—
—
—
—
nA
V
pF
nm
A/W
A/W
A/W
ns
ns
ns
MHz
MHz
MHz
