TetraFET
D1001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
4
M
3
E
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W 鈥?28V 鈥?175MHz
SINGLE ENDED
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
Tol.
0.005
0.005
5掳
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
DA
PIN 1
PIN 3
SOURCE
SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45掳
6.35
3.17
5.71
9.52
6.60
0.13
4.32
2.54
20.32
PIN 2
PIN 4
Tol.
0.13
0.13
5掳
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
DRAIN
GATE
Inches
0.975
0.725
45掳
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?16 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25掳C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
70V
卤20V
5A
鈥?5 to 150掳C
200掳C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
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